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FUJITSU SEMICONDUCTOR DATA SHEET
DS04-27239-1E
ASSP For Power Supply Applications
(General-Purpose DC/DC Converter)
3-ch DC/DC Converter IC
MB39A112
s DESCRIPTION
The MB39A112 is a 3-channel DC/DC converter IC using pulse width modulation (PWM) , and the MB39A112 is suitable for down-conversion. 3-channel is built in TSSOP-20P package. Each channel can be controlled and soft-start. The MB39A112 contains a constant voltage bias circuit for output block, capable of implementing an efficient high-frequency DC/DC converter. It is ideal for built-in power supply such as ADSL modems.
s REATURES
* Supports for down-conversion (CH1 to CH3) * Power supply voltage range : 7 V to 25 V * Error amplifier threshold voltage : 1.00 V 1% (CH1) : 1.23 V 1% (CH2, CH3) * Oscillation frequency range : 250 kHz to 2.6 MHz * Built-in soft-start circuit independent of loads * Built-in timer-latch short-circuit protection circuit * Built-in totem-pole type output for P-channel MOS FET devices * Built-in constant voltage (VCCO - 5 V) bias circuit for output block
s PACKAGE
20-pin plastic TSSOP
(FPT-20P-M06)
MB39A112
s PIN ASSIGNMENT
(TOP VIEW)
CS1 : 1 -INE1 : 2 FB1 : 3 VCC : 4 RT : 5 CT : 6 GND : 7 FB2 : 8 -INE2 : 9 CS2 : 10
20 : VCCO 19 : OUT1 18 : OUT2 17 : OUT3 16 : VH 15 : GNDO 14 : CSCP 13 : FB3 12 : -INE3 11 : CS3
(FPT-20P-M06)
2
MB39A112
s PIN DESCRIPTION
Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol CS1 - INE1 FB1 VCC RT CT GND FB2 - INE2 CS2 CS3 - INE3 FB3 CSCP GNDO VH OUT3 OUT2 OUT1 VCCO I/O I O O I I O O O O O Descriptions CH1 soft-start setting capacitor connection terminal. CH1 error amplifer inverted input terminal. CH1 error amplifer output terminal. Control circuit power supply terminal. Triangular-wave oscillation frequency setting resistor connection terminal. Triangular-wave oscillation frequency setting capacitor connection terminal. Ground terminal. CH2 error amplifier output terminal. CH2 error amplifier inverted input terminal. CH2 soft-start setting capacitor connection terminal. CH3 soft-start setting capacitor connection terminal. CH3 error amplifier inverted input terminal. CH3 error amplifier output terminal. Timer-latch short-circuit protection capacitor connection terminal. Ground terminal. Power supply terminal for driving output circuit. (VH = VCCO - 5 V) . CH3 external Pch MOS FET gate driving terminal. CH2 external Pch MOS FET gate driving terminal. CH1 external Pch MOS FET gate driving terminal. Power supply terminal for driving output circuit. (Connect to same potential as VCC terminal).
3
MB39A112
s BLOCK DIAGRAM
Threshold voltage 1.0 V 1%
VREF 10 A CS1 1
L priority
-INE1 2
CH1 PWM Comp.1 Drive1 Pch
20 VCCO
- + + 1.0 V
Error Amp1 + -
19 OUT1
FB1 3
IO = 150 mA
-INE2 9 VREF 10 A CS2 10
L priority
Threshold voltage 1.23 V 1%
- + + 1.23 V IO = 150 mA Error Amp2 + - PWM Comp.2
CH2
Drive2 Pch 18 OUT2
FB2 8
-INE3 12 10 A CS3 11
Threshold voltage 1.23 V 1%
VREF - + + 1.23 V IO = 150 mA Error Amp3 + - PWM Comp.3
CH3
Drive3 Pch 17 OUT3
L priority
FB3 13
H priority
SCP Comp.
+ + + - 2.7 V
VCCO - 5 V Bias Voltage VH
16 VH
SCP
15 GNDO
H: at SCP
CSCP 14 2.5 V 2.0 V OSC UVLO
Error Amp Power Supply SCP Comp. Power Supply
4 VCC
H: UVLO release
bias 3.5 V VREF
ErrorAmp Reference 1.0 V/1.23 V
VR Power ON/OFF CTL
GND 5 RT 6 CT 7 GND
4
MB39A112
s ABSOLUTE MAXIMUM RATINGS
Parameter Power supply voltage Output current Peak output current Power dissipation Storage temperature Symbol Vcc Io IOP PD TSTG Conditions VCC, VCCO terminal OUT1, OUT2, OUT3 terminal Duty 5 % (t = 1/fosc x Duty) Ta + 25 C Rating Min - 55 Max 28 20 400 1280* + 125 Unit V mA mA mW C
* : The package is mounted on the dual-sided epoxy board (10 cm x 10 cm) . WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
s RECOMMENDED OPERATING CONDITIONS
Parameter Power supply voltage Input voltage Output current Oscillation frequency Timing capacitor Timing resistor VH terminal capacitor Soft-start capacitor Short-circuit detection capacitor Operating ambient temperature Symbol Vcc VIN IO IVH fosc CT RT CVH CS CSCP Ta VH terminal CS1, CS2, CS3 terminal CSCP terminal Conditions VCC, VCCO terminal - INE terminal OUT1, OUT2, OUT3 terminal VH terminal Value Min 7 0 - 15 0 250 22 4.7 - 30 Typ 12 - 1200 100 10 0.1 0.1 0.01 + 25 Max 25 Vcc - 1.8 15 30 2600 1000 22 1.0 1.0 1.0 + 85 Unit V V mA mA kHz pF k F F F C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand.
5
MB39A112
s ELECTRICAL CHARACTERISTICS
(VCC = VCCO = 12 V, Ta = + 25 C) Parameter Undervoltage Threshold voltage Lockout Protection Circuit Block Hysteresis width [UVLO] Short-circuit Protection Circuit Block [SCP] Triangular Wave Oscillator Block [OSC] Soft-start Block [CS1, CS2, CS3] Threshold voltage Input source current Reset voltage Oscillation frequency SymPin No. bol VTH VHYS VTH ICSCP VRST 4 4 14 14 4 VCC = CT = 100 pF, RT = 10 k Conditions VCC = Value Min 6.35 0.67 - 1.4 6.2 Typ 6.55 0.15 0.72 - 1.0 6.4 Max 6.75 0.77 - 0.6 6.6 Unit V V V A V
fosc
17 to 19
1080
1200
1320
kHz
Charge current
ICS
1, 10, 11 2 2 3 3 3 3 3 3 9, 12 9, 12 8, 13 8, 13 8, 13 8, 13 8, 13 8, 13
FB1 = 2.25 V - INE1 = 0 V DC AV = 0dB FB1 = 2.25 V FB1 = 2.25 V FB2 = FB3 = 2.25 V - INE2 = - INE3 = 0 V DC AV = 0 dB FB2 = FB3 = 2.25 V FB2 = FB3 = 2.25 V
- 14 0.99 - 250 60 3.2 150 1.218 - 250 60 3.2 150
- 10 1.00 - 63 100 1.5* 3.4 40 -2 250 1.230 - 63 100 1.5* 3.4 40 -2 250
-6 1.01 200 -1 1.242 200 -1
A V nA dB MHz V mV mA A V nA dB MHz V mV mA A
Threshold voltage Input bias current Voltage gain Error Amp Block (CH1) [Error Amp1] Frequency band width Output voltage
VTH IB AV BW VOH VOL ISINK VTH IB AV BW VOH VOL ISINK
Output source current ISOURCE Output sink current Threshold voltage Input bias current Error Amp Block (CH2, CH3) [Error Amp2, Error Amp3] Voltage gain Frequency band width Output voltage
Output source current ISOURCE Output sink current * : Standard design value
(Continued)
6
MB39A112
(Continued)
SymPin No. bol VT0 VT100 VH ISOURC
E
(VCC = VCCO = 12 V, Ta = + 25 C) Parameter Conditions Value Min 1.9 VCCO - 5.5 Typ 2.0 2.5 VCCO - 5.0 - 150* Max 2.6 VCCO - 4.5 Unit V V V
PWM Comparator Threshold voltage Block [PWM Comp.] Bias Voltage Block [VH] Output voltage Output source current
17 to 19 Duty cycle = 0 % 17 to 19 Duty cycle = 100 % 16
Duty 5 % 17 to 19 OUT1 = OUT2 = OUT3 = 7 V Duty 5 % 17 to 19 OUT1 = OUT2 = OUT3 = 12 V 17 to 19 17 to 19 4 OUT1 = OUT2 = OUT3 = - 15 mA OUT1 = OUT2 = OUT3 = 15 mA
mA
Output Block [Drive]
Output sink current
ISINK

150*
19.5 15 9
mA mA
ROH Output ON resistor ROL General Power supply current ICC
13 10 6
* : Standard design value
7
MB39A112
s TYPICAL CHARCTERISTICS
Power Supply Current vs. Power Supply Voltage Power supply current ICC (mA)
10 8 6 4 2 0 0 5 10 15 20 25 Ta = +25 C RT = OPEN
Power supply voltage VCC (V)
Error Amp (ERR1) Threshold Voltage vs. Ambient Temperature Threshold voltage VTH (%) Threshold voltage VTH (%)
2.0 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -40 -20 0 20 40 60 80 100 VCC = 12 V FB1 = 0 mA
Error Amp (ERR2, ERR3) Threshold Voltage vs. Ambient Temperature
2.0 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -40 -20 0 20 40 60 80 100 VCC = 12 V FB2(3) = 0 mA
Ambient temperature Ta ( C) Triangular Wave Oscillation Frequency vs. Timing Resistor Triangular wave oscillation frequency fosc (kHz)
10000
Ambient temperature Ta ( C) Triangular Wave Oscillation Frequency vs. Timing Capacitor Triangular wave oscillation frequency fosc (kHz)
10000 Ta = +25 C VCC = 12 V
Ta = +25 C VCC = 12 V CT = 22 pF CT = 100 pF CT = 1000 pF CT = 390 pF
1000
1000 RT = 22 k 100
RT = 4.7 k RT = 10 k
100
10 1 10 100 1000
10 10
100
1000
10000
Timing resistor RT (k)
Timing capacitor CT (pF)
(Continued)
8
MB39A112
Triangular Wave Upper/Lower Limit Voltage vs. Triangular Wave Oscillation Frequency Triangular wave upper/lower limit voltage VCT (V)
2.8 2.6 2.4 2.2
Lower limit
Triangular Wave Upper/Lower Limit Voltage vs. Ambient Temperature Triangular wave upper/lower limit voltage VCT (V)
2.8 2.6 2.4 2.2
Lower limit
Ta = +25 C VCC = 12 V CT = 100 pF
Upper limit
VCC = 12 V RT = 10 k CT = 100 pF
Upper limit
2.0 1.8
2.0 1.8 -40 -20
0
500 1000 1500 2000 2500 3000
0
20
40
60
80
100
Triangular wave oscillation frequency fosc (kHz) Triangular Wave Oscillation Frequency vs. Ambient Temperature
Ambient temperature Ta ( C) Triangular Wave Oscillation Frequency vs. Power Supply Voltage
Triangular wave oscillation frequency fosc (kHz)
1400 1350 1300 1250 1200 1150 1100 1050 1000 -40 -20 0 20 40
Triangular wave oscillation frequency fosc (kHz)
VCC = 12 V RT = 10 k CT = 100 pF
1400 1350 1300 1250 1200 1150 1100 1050 1000 0 5 10 15
Ta = +25 C RT = 10 k CT = 100 pF
60
80
100
20
25
30
Ambient temperature Ta ( C)
Power supply voltage VCC (V)
(Continued)
9
MB39A112
(Continued)
Error Amp (CH1) Gain, Phase vs. Frequency
40 AV 30 20 Ta = +25 C VCC = 12 V 180 10 k 1 F + IN 10 k 3.5 V 2.4 k 1 + + 1.0 V 240 k
Phase (deg)
90
Gain AV (dB)
10 0 -10 -20 -30 -40 100 1k 10 k 100 k 1M -180 10 M -90 0
2
- 3 OUT Error Amp1
Frequency f (Hz) Error Amp (CH2, CH3) Gain, Phase vs. Frequency
40 AV 30 20 90 Ta = +25 C VCC = 12 V 180 10 k 1 F + 240 k
Gain AV (dB)
10 0 -10 -20 -30 -40 100 1k 10 k 100 k 1M -180 10 M -90 0
Phase (deg)
IN 10 k
2.4 k
9 (12) 10 (11)
- + + 1.23 V 8 OUT (13) Error Amp2 (Error Amp3)
3.5 V
Frequency f (Hz) Maximum Power Dissipation vs. Ambient Temperature Maximum power dissipation PD (mW)
1400 1300 1280 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 -40
-20
0
20
40
60
80
100
Ambient temperature Ta ( C)
10
MB39A112
s FUNCTION
1. DC/DC Converter Function
(1) Triangular Wave Oscillator Block (OSC) The triangular wave oscillator incorporates a timing capacitor and a timing resistor connected respectively to the CT terminl (pin 6) and RT terminl (pin 5) to generate triangular oscillation waveform amplitude of 2.0 V to 2.5 V. The triangular waveforms are input to the PWM comparator in the IC. (2) Error Amplifier Block (Error Amp1, Error Amp2, Error Amp3) The error amplifier detects the DC/DC converter output voltage and outputs PWM control signals. In addition, an arbitrary loop gain can be set by connecting a feedback resistor and capacitor from the output terminal to inverted input terminal of the error amplifier, enabling stable phase compensation to the system. Also, it is possible to prevent rush current at power supply start-up by connecting a soft-start capacitor with the CS1 terminl (pin 1) , CS2 terminl (pin10) and CS3 terminl (pin 11) which are the non-inverted input terminal for Error Amp. The use of error Amp for soft-start detection makes it possible for a system to operate on a fixed soft-start time that is independent of the output load on the DC/DC converter. (3) PWM Comparator Block (PWM Comp.) The PWM comparator is a voltage-to-pulse width modulator that controls the output duty depending on the input/ output voltage. The comparator keeps output transistor on while the error amplifier output voltage remain higher than the triangular wave voltage. (4) Output Block The output blobk is in the totem pole configulation, capable of driving an external P-channel MOS FET. (5) Bias Voltage Block (VH) This bias voltage circuit outputs VCC - 5 V (Typ) as minimum potential of the output circuit.
2. Protective Function
(1) Timer Latch Short-circuit Protection Circuit (SCP) Each channel has a short-circuit detection comparator (SCP Comp.) which constantly compares the error Amp. output level to the reference voltage. While DC/DC converter load conditions are stable on all channels, the short-circuit detection comparator output remains at "L", and the CSCP terminal is held at "L" level. If the load condition on a channel changes rapidly due to a short-circuit of the load, causing the output voltage to drop, the output of the short-circuit detection comparator on that channel goes to "H" level. This causes the external short-circuit protection capacitor CSCP connected to the CSCP terminal (pin 14) to be charged. When the capacitor CSCP is charged to the threshold voltage (VTH = 0.72 V) , the latch is set and the external : FET is turned off (dead time is set to 100 %) . At this point, the latch input is closed and the CSCP terminal is held at "L" level. The latch applied by the timer-latch short-circuit protection circuit can be reset by recycling the power supply (VCC) (See "s SETTING TIME CONSTANT FOR TIMER-LATCH SHORT-CIRCUIT PROTECTION CIRCUIT") .
11
MB39A112
(2) Undervoltage Lockout Protection Circuit Block (UVLO) The transient state or a momentary decrease in supply voltage, which occurs when the power supply is turned on, may cause the IC to malfunction, resulting in breakdown or degradation of the system. To prevent such malfunctions, under voltage lockout protection circuit detects a decrease in internal reference voltage with respect to the power supply voltage, turns off the output transistor, and sets the dead time to 100% while holding the CSCP terminal (pin 14) at the "L" level. The circuit restores the output transistor to normal when the supply voltage reaches the threshold voltage of the undervoltage lockout protection circuit. (3) Protection Circuit Operating Function Table This table refers to output condition when each protection circuit is operating. CH1 CH2 Operating circuit OUT1 OUT2 Short-circuit protection circuit Under-voltage lockout circuit H H H H CH3 OUT3 H H
The latch can be reset as follows after the short-circuit protection circuit is actuated. Recycling VCC resets the latch whenever the short-circuit protection circuit has been actuated.
12
MB39A112
s SETTING THE OUTPUT VOLTAGE
* CH1
VO
R1 Error Amp 2 -INE1 R2 - + + 1.00 V CS1 1 VO (V) = 1.00 R2 (R1 + R2)
* CH2, CH3
VO
R1 (-INE3) -INE2 R2 (CS3) CS2
12 9 - + +
Error Amp VO (V) = 1.23 R2 (R1 + R2)
1.23 V 11 10
s SETTING THE TRIANGULAR OSCILLATION FREQUENCY
The triangular oscillation frequency is determined by the timing capacitor (CT) connected to the CT terminal (pin 6) and the timing resistor (RT) connected to the RT terminal (pin 5) . Triangular oscillation frequency : fosc fosc (kHz)= : 1200000 CT (pF) * RT (k)
13
MB39A112
s SETTING THE SOFT-START AND DISCHARGE TIMES
To prevent rush currents when the IC is turned on, you can set a soft-start by connecting soft-start capacitors (CS1, CS2 and CS3) to the CS1 terminal (pin 1) for channel 1, CS2 terminal (pin 10) for channel 2 and CS3 terminal (pin 11) for channel 3 respectively. Setting each control terminal (CTLX) from "H" to "L" starts charging the external soft-start capacitors (CS1, CS2 and CS3) connected to the CS1, CS2 and CS3 terminal at about 10 A. The DC/DC converter output voltage rises in proportion to the CS terminal voltage. Also, soft-start time is obtained by the following formulas. Soft-start time : ts (time to output 100%) CH1 CH2 CH3 * Soft-start circuit
-INE1 (-INE2) (-INE3) VO CS1 (CS2) (CS3) VREF 10 A - + + Error Amp
: ts1[s] = 0.100 x CS1[F] : : ts2[s] = 0.123 x CS2[F] : : ts3[s] = 0.123 x CS3[F] :
L priority
CH1 ON/OFF signal
(L : ON, H : OFF) CTLX FB1 (FB2) (FB3)
1.23 V /1.0 V
H : at SCP
SCP
UVLO
H: UVLO release
* Soft-start operation = 3.4 V : = 1.23 V/ : 1.00 V =0V :
CS terminal voltage Error Amp. reference voltage
t
Soft-start time ts
H
CTLX signal
L t
14
MB39A112
s TREATMENT WITHOUT USING CS TERMINAL
When not using the soft-start function, open the CS1 terminal (pin 1) , CS2 terminal (pin 10) and CS3 terminal (pin 11) . * Without setting soft-start tme
"Open"
1 CS1
"Open"
10 CS2
"Open"
11 CS3
15
MB39A112
s SETTING TIME CONSTANT FOR TIMER-LATCH SHORT-CIRCUIT PROTECTION CIRCUIT
Each channel uses the short-circuit detection comparator (SCP Comp.) to always compare the error amplifier's output level to the reference voltage. While DC/DC converter load conditions are stable on all channels, the short-circuit detection comparator output remains at "L" level, and the CSCP terminal (pin 14) is held at "L" level. If the load condition on a channel changes rapidly due to a short-circuit of the load, causing the output voltage to drop, the output of the short-circuit detection comparator goes to "H" level. This causes the extemal shortcircuit protection capacitor CSCP connected to the CSCP terminal to be charged at 1 A. Short-circuit detection time : tcscp tcscp[s] = 0.72 x CSCP [F] : When the capacitor CSCP is charged to the threshold voltage (VTH = 0.72 V) , the latch is set and the external FET : is turned off (dead time is set to 100 %) . At this time, the latch input is closed and the CSCP terminal (pin 14) is held at "L" level. If any of CH1 to CH3 detects a short circuit, all the channels are stopped. * Timer-latch short-circuit protection circuit
VO
R1
-INE1 (-INE2) (-INE3) VREF
R2
10 A
CS1 (CS2) (CS3)
- + +
Error Amp
1.23 V /1.0 V
FB1 (FB2) (FB3)
SCP Comp.
+ + + - 2.7 V
[SCP] 1 A
H: UVLO release
CSCP 14 VCC S R UVLO
Latch
H: at SCP
16
MB39A112
s TREATMENT WITHOUT USING CSCP TERMINAL
When not using the timer-latch short-circuit protection circuit, connect the CSCP terminal (pin 14) to GND with the shortest distance. * Treatment without using CSCP terminal
14 CSCP
7 GND
17
MB39A112
s I/O EQUIVALENT CIRCUIT
<>
VCC 4 VREF (3.5 V)
<>
VCC
<>
VCC VREF (3.5 V)
ESD protection element
ESD protection element
2 k 14 CSCP ESD protection element
VREF (3.5 V) 1.2 V + - 5 RT GND
CT 6
GND 7
GND
<>
VCC VREF (3.5 V) CSX VCC VREF (3.5 V) -INE1 2
<>
CS1 1.00 V
3 FB1
GND GND
<>
VCC VREF (3.5 V) CSX 1.23 V
<>
VCC
FBX FBX
CT
GND
GND
<>
VCC VCCO VCCO 20
<>
OUTX 16 VH VH GND GNDO GNDO 15
X : Each channel No. 18
MB39A112
s APPLICATION EXAMPLE
Stepdown
L1 2 H C1 2.2 F D1 C2 4.7 F VO1 (1.2 V) IO1 = 0.8 1.5 A
R6 R7 2.2 k 18 k A R8 100 k
-INE1
2 VREF 10 A - + + 1.0 V
Threshold voltage 1.0 V 1 %
Error Amp1 + - PWM Comp.1
A CH1 20 VCCO C17 0.1 F Drive1 Pch 19 OUT1 Q1
CH1 ON/OFF signal
(L : ON, H : OFF) CTL1
CS1 C7 0.1 F C8 0.022 F R9 820 FB1
1
L priority
3
IO = 150 mA B CH2 PWM Comp.2 Drive2 Pch 18 OUT2 Q2 L2 3.3 H + - C3 2.2 F D2
Stepdown
VO2 (3.3 V) IO2 = 0.15 1 A C4 4.7 F
R11 R12 4.7 k 56 k B
-INE2
9 VREF 10 A - + +
Threshold voltage 1.23 V 1 %
Error Amp2
CH2 ON/OFF signal
(L : ON, H : OFF) CTL2
R13 36 k CS2 C12 0.1 F C11 0.01 F R14 820 FB2 8 10
L priority
1.23 V IO = 150 mA C
Stepdown
L3 VO3 (5.0 V) IO3 = 0.15 0.3 A C6 4.7 F
R15 R16 680 30 k VIN (12 V) C R17 10 k
-INE3
12 10 A
VREF - + + 1.23 V
Threshold voltage 1.23 V 1 %
Error Amp3 + - PWM Comp.3
CH3
Q3
10 H Drive3 Pch 17 C5 2.2 F D3
CH3 ON/OFF signal
(L : ON, H : OFF) CTL3
CS3 R18 1 k FB3
11
OUT3
C13 0.1 F C14 0.01 F
L priority
13
H priority
SCP Comp. + + + - 2.7 V
IO = 150 mA VCCO - 5 V Bias Voltage VH 15
C16 0.1 F
16
VH
GNDO
Charge current 1 A
C15 1000 pF
SCP CSCP
H: at SCP
14 2.5 V 2.0 V OSC UVLO
Error Amp Power Supply SCP Comp. Power Supply
ErrorAmp Reference 1.0 V/1.23 V
VREF VR Power ON/OFF CTL 4 VCC C9 0.1 F
H: UVLO release
bias 3.5 V
GND 5 RT R10 5.1 k CT C10 100 pF 6 7 GND
19
MB39A112
s PARTS LIST
COMPONENT Q1, Q2, Q3 D1, D2 D3 L1 L2 L3 C1, C3, C5 C2, C4, C6 C7, C9, C12 C8 C10 C11, C14 C13, C16, C17 C15 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 R17 R18 Note : SANYO TOKO TDK ssm ITEM Pch FET Pch FET Diode Diode Inductor Inductor Inductor Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Ceramics Condenser Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor : SANYO Electric Co., Ltd. : TOKO Inc. : TDK Corporation : SUSUMU Co., Ltd. SPECIFICATION VDS = - 30 V, ID = - 2.0 A VDS = - 30 V, ID = - 1.0 A VF = 0.55 V (Max) , at IF = 2 A VF = 0.4 V (Max) , at IF = 0.5 A 2 H 3.3 H 10 H 2.2 F 4.7 F 0.1 F 0.022 F 100 pF 0.01 F 0.1 F 1000 pF 2.2 k 18 k 100 k 820 5.1 k 4.7 k 56 k 36 k 820 680 30 k 10 k 1 k 3 A, 16 m 2.57 A, 21.4 m 1.49 A, 41.2 m 25 V 10 V 50 V 50 V 50 V 50 V 50 V 50 V 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % 0.5 % VENDOR SANYO SANYO SANYO SANYO TOKO TOKO TOKO TDK TDK TDK TDK TDK TDK TDK TDK ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm ssm PARTS No. MCH3312 MCH3308 SBE001 SBE005 A916CY-2R0M A916CY-3R3M A916CY-100M C3216JB1E225K C3216JB1A475M C1608JB1H104K C1608JB1H223K C1608CH1H101J C1608JB1H103K C1608JB1H104K C1608JB1H102K RR0816P-222-D RR0816P-183-D RR0816P-104-D RR0816P-821-D RR0816P-512-D RR0816P-472-D RR0816P-563-D RR0816P-363-D RR0816P-821-D RR0816P-681-D RR0816P-303-D RR0816P-103-D RR0816P-102-D
20
MB39A112
s SELECTION OF COMPONENTS
* Pch MOS FET The Pch MOS FET for switching use should be rated for at least 20 % or more than the maximum input voltage. To minimize continuity loss, use a FET with low RDS (ON) between the drain and source. For high input voltage and high frequency operation, on-cycle switching loss will be higher so that power dissipation must be considered. In this application, the SANYO MCH3312 and MCH3308 are used. Continuity loss, on/off-cycle switching loss and total loss are determined by the following formulas. The selection must ensure that peak drain current does not exceed rated values. Continuity loss : Pc PC = ID2 x RDS (ON) x Duty
On-cycle switching loss : PS (ON) PS (ON) = VD (Max) x ID x tr x fosc 6
Off-cycle switching loss : PS (OFF) PS (OFF) = VD (Max) x ID (Max) x tf x fosc 6
Total loss : PT PT = PC + PS (ON) + PS (OFF)
Example : Using the MCH3312 * CH1 Input voltage VIN = 12 V, output voltage VO = 1.2 V, drain current ID = 1.5 A, oscillation frequency fOSC = 2350 kHz, L = 2 H, drain-source on resistance RDS(ON) = 180 m, tr = 2.9 ns, tf = 8.7 ns. : : : Drain current (Max) : ID (Max) ID (Max) = Io + VIN - Vo 2L 12 - 1.2 2 x 2.0 x 10
-6
tON x 1 2350 x 103 x 0.1
= 1.5 + = : 1.61 A
Drain current (Min) : ID (Min) ID (Min) = Io- VIN - Vo 2L 12 - 1.2 2 x 2.0 x 10
-6
tON x 1 2350 x 103 x 0.1
= 1.5 - = : 1.39 A
21
MB39A112
PC = ID2 x RDS (ON) x Duty = 1.52 x 0.18 x 0.1 = 0.04 W : PS (ON) = VD x ID x tr x fosc 6 12 x 1.5 x 2.9 x 10-9 x 2350 x 103 = 6 = 0.02 W : VD x ID (Max) x tf x fosc 6 12 x 1.61 x 8.7 x 10-9 x 2350 x 103 = 6 = 0.066 W :
PS (OFF) =
PT = Pc + PS (ON) + PS (OFF) = 0.04 + 0.02 + 0.066 : = 0.126 W : The above power dissipation figures for the MCH3312 are satisfied with ample margin at 1.0 W (Ta = +25 C) . * CH2 Input voltage VIN = 12 V, output voltage VO = 3.3 V, drain current ID = 1.0 A, oscillation frequency fOSC = 2350 kHz, L = 3.3 H, drain-source on resistance RDS(ON) = 180 m, tr = 2.9 ns, tf = 8.7 ns. : : : Drain current (Max) : ID (Max) VIN - Vo tON ID (Max) = Io + 2L 12 - 3.3 = 1+ 2 x 3.3 x 10-6 = 1.15 A : Drain current (Min) : ID (Min) VIN - Vo tON ID (Min) = Io - 2L 12 - 3.3 = 1- 2 x 3.3 x 10 -6 = 0.85 A : PC = ID2 x RDS (ON) x Duty = 12 x 0.18 x 0.275 = 0.0495 W :
x
1 2350 x 103
x
0.275
x
1 2350 x 103
x
0.275
22
MB39A112
PS (ON) = = = : PS (OFF) = = = : VD x ID x tr x fosc 6 12 x 1 x 2.9 x 10-9 x 2350 x 103 6 0.0136 W VD x ID (Max) x tf x fosc 6 12 x 1.15 x 8.7 x 10-9 x 2350 x 103 6 0.047 W
PT = PC + PS (ON) + PS (OFF) = 0.0495 + 0.0136 + 0.047 : = : 0.11 W
The above power dissipation figures for the MCH3312 are satisfied with ample margin at 1.0 W (Ta = +25 C) . Example : Using the MCH3308 * CH3 Input voltage VIN = 12 V, output voltage Vo = 5.0 V, drain current ID = 0.3 A, oscillation frequency fosc = 2350 kHz, L = 10 H, drain-source on resistance RDS (ON) = 600 m, tr = 4 ns, tf = 4 ns. : : : Drain current (Max) : ID (Max) ID (Max) = Io + VIN - Vo 2L tON x 1 2350 x 103 x 0.417
= 0.3 + = :
12 - 5 2 x 10 x 10
-6
0.36 (A)
Drain current (Min) : ID (Min) ID (Min) = Io - VIN - Vo 2L tON x 1 2350 x 103 x 0.417
= 0.3 - = 0.24 (A) :
12 - 5 2 x 10 x 10
-6
PC = ID2 x RDS (ON) x Duty = 0.32 x 0.6 x 0.417 = 0.023 W :
23
MB39A112
PS (ON) = = = : PS (OFF) = VD x ID x tr x fosc 6 12 x 0.3 x 4 x 10-9 x 2350 x 103 6 0.0056 W
VD x ID (Max) x tf x fosc 6 12 x 0.36 x 4 x 10-9 x 2350 x 103 = 6 = 0.0068 W :
PT = Pc + PS (ON) + PS (OFF) = 0.023 + 0.0056 + 0.0068 : = 0.0354 W : The above power dissipation figures for the MCH3308 are satisfied with ample margin at 0.8 W (Ta = +25 C) . * Inductors In selecting inductors, it is of course essential not to apply more current than the rated capacity of the inductor, but also to note that the lower limit for ripple current is a critical point that if reached will cause discontinuous operation and a considerable drop in efficiency. This can be prevented by choosing a higher inductance value, which will enable continuous operation under light loads. Note that if the inductance value is too high, however, direct current resistance (DCR) is increased and this will also reduce efficiency. The inductance must be set at the point where efficiency is greatest. Note also that the DC superimposition characteristics become worse as the load current value approaches the rated current value of the inductor, so that the inductance value is reduced and ripple current increases, causing loss of efficiency. The selection of rated current value and inductance value will vary depending on where the point of peak efficiency lies with respect to load current. Inductance values are determined by the following formulas. The L value for all load current conditions is set so that the peak to peak value of the ripple current is 1/2 the load current or less. Inductance value : L 2 (VIN - Vo) L tON Io Example * CH1 2 (VIN - Vo1) L Io 2 x (12 -1.2) 1.5 0.61 H
tON x 1 2350 x 103 x 0.1
24
MB39A112
* CH2 2 (VIN - Vo2) L Io 2 x (12-3.3) 1 2.04 H * CH3 2 (VIN - Vo3) L Io 2 x (12 - 5) 0.3 8.28 H
tON x 1 2350 x 103 x 0.275
tON x 1 2350 x 103 x 0.417
Inductance values derived from the above formulas are values that provide sufficient margin for continuous operation at maximum load current, but at which continuous operation is not possible at light loads. It is therefore necessary to determine the load level at which continuous operation becomes possible. In this application, the TOKO A916CY-2R0M, A916CY-3R3M and A916CY-100M are used. At 2 H, 3.3 H and 10 H, the load current value under continuous operating conditions is determined by the following formula. Load current value under continuous operating conditions : Io Io Vo 2L tOFF
Example : Using the A916CY-2R0M 2 H (allowable tolerance 20 %), rated current = 3 A * CH1 Vo1 Io 2L
tOFF 1.2 x 1 2350 x 103 x (1 - 0.1)
2 x 2 x 10
-6
0.11 A
Example : Using the A916CY-3R3M 3.3 H (allowable tolerance 20 %) , rated current = 2.57 A * CH2 Vo2 Io 2L
tOFF 3.3 x 1 2350 x 103 x (1 - 0.275)
2 x 3.3 x 10
-6
0.15 A
25
MB39A112
Example : Using the A916CY-100M 10.0 H (allowable tolerance 20 %) , rated current = 1.49 A * CH3 Vo3 Io 2L
tOFF 5 x 1 2350 x 103 x (1 - 0.417)
2 x 10 x 10-6
62.0 mA
To determine whether the current through the inductor is within rated values, it is necessary to determine the peak value of the ripple current as well as the peak-to-peak values of the ripple current that affect the output ripple voltage. The peak value and peak-to-peak value of the ripple current can be determined by the following formulas. Peak value : IL IL Io + VIN - Vo 2L tON
Peak-to-peak value : IL IL = VIN - Vo L tON
Example : Using the A916CY-2R0M 2.0 H (allowable tolerance 20 %) , rated current = 3.0 A * CH1 Peak value IL Io + 1.5 + 1.61 A VIN - Vo1 2L tON x 1 2350 x 103 x 0.1
12 - 1.2 2 x 2.0 x 10
-6
Peak-to-peak value VIN - Vo1 tON IL = L = = : 12 - 1.2 2.0 x 10-6 0.23 A x 1 2350 x 103 x 0.1
26
MB39A112
Example : Using the A916CY-3R3M 3.3 H (allowable tolerance 20 %) , rated current = 2.57 A * CH2 Peak value IL Io + 1.0 + 1.15 A VIN - Vo2 2L 12 - 3.3 2 x 3.3 x 10-6 tON x 1 2350 x 103 x 0.275
Peak-to-peak value VIN - Vo2 IL = tON L = = : 12 - 3.3 3.3 x 10 0.309 A
-6
x
1 2350 x 103
x 0.275
Example : Using the A916CY-100M 10.0 H (allowable tolerance 20 %) , rated current = 1.49 A * CH3 Peak value IL Io + 0.3 + 0.36 A VIN - Vo3 2L 12 - 5 2 x 10 x 10
-6
tON x 1 2350 x 103 x 0.417
Peak-to-peak value VIN - Vo3 IL = tON L = = : 12 - 5 10 x 10 0.124 A
-6
x
1 2350 x 103
x 0.417
27
MB39A112
* Flyback diode The flyback diode is generally used as a Shottky barrier diode (SBD) when the reverse voltage to the diode is less than 40 V. The SBD has the characteristics of higher speed in terms of faster reverse recovery time, and lower forward voltage, and is ideal for archiving high efficiency. As long as the DC reverse voltage is sufficiently higher than the input voltage, the average current flowing through the diode is within the average output current level, and peak current is within peak surge current limits, there is no problem. In this application the SANYO SBE001, SBS005 are used. The diode average current and diode peak current can be calculated by the following formulas. Diode mean current : IDi IDi Io x ( 1- Vo VIN )
Diode peak current : IDip IDip (Io + Vo 2L tOFF)
Example : Using the SBE001 VR (DC reverse voltage) = 30 V, average output current = 2.0 A, peak surge current = 20 A, VF (forward voltage) = 0.55 V, at IF = 2.0 A * CH1 Diode mean current IDi Io x 1.5 x 1.35 A Diode peak current Vo1 IDip (Io + 2L 1.61 A * CH2 Diode mean current IDi Io x (1 - Vo2 VIN ) (1 - Vo1 VIN )
(1 - 0.1)
tOFF)
1.0 x (1 - 0.275) 0.725 A
28
MB39A112
Diode peak current Vo2 IDip (Io + 2L 1.15 A
tOFF)
Example : Using the SBS005 VR (DC reverse voltage) = 30 V, average output current = 1.0 A, peak surge current = 10 A, VF (forward voltage) = 0.4 V, at IF = 0.5 A * CH3 Diode mean current IDi Io x (1 - Vo3 VIN )
0.3 x (1 - 0.417) 0.175 A
Diode peak current Vo3 IDip (Io + 2L 0.36 A
tOFF)
29
MB39A112
s REFERENCE DATA
Conversion Efficiency vs. Load Current Characteristics (CH1)
100
Ta = + 25 C 1.2 V output CTL1 = "L" CTL2 = "H" CTL3 = "H" RT = 5.1 k CT = 100 pF
Conversion efficiency (%)
90 80 70 60 50 40 30 10 m
VIN = 7 V VIN = 10 V VIN = 12 V
100 m
1
10
Load current IL (A) Conversion Efficiency vs. Load Current Characteristics (CH2)
100
Ta = + 25 C 3.3 V output CTL1 = "H" CTL2 = "L" CTL3 = "H" RT = 5.1 k CT = 100 pF
Conversion efficiency (%)
90 80 70 60 50 40 30 10 m
VIN = 7 V VIN = 10 V VIN = 12 V
100 m
1
10
Load current IL (A) Conversion Efficiency vs. Load Current Characteristics (CH3)
100 90 80 70 60 50 40 30 10 m
Ta = + 25 C 5.0 V output CTL1 = "H" CTL2 = "H" CTL3 = "L" RT = 5.1 k CT = 100 pF
Conversion efficiency (%)
VIN = 7 V VIN = 10 V VIN = 12 V
100 m
1
10
Load current IL (A)
(Continued)
30
MB39A112
Conversion Efficiency vs. Load Current Characteristics (CH1)
100
Ta = + 25 C 1.2 V output CTL1 = "L" CTL2 = "H" CTL3 = "H" RT = 10 k CT = 100 pF
Conversion efficiency (%)
90 80 70 60 50 40 30 10 m
VIN = 7 V VIN = 10 V VIN = 12 V
100 m
1
10
Load current IL (A) Conversion Efficiency vs. Load Current Characteristics (CH2)
100
Ta = + 25 C 3.3 V output CTL1 = "H" CTL2 = "L" CTL3 = "H" RT = 10 k CT = 100 pF
Conversion efficiency (%)
90 80 70 60 50 40 30 10 m
VIN = 7 V VIN = 10 V VIN = 12 V
100 m
1
10
Load current IL (A) Conversion Efficiency vs. Load Current Characteristics (CH3)
100
Ta = + 25 C 5.0 V output CTL1 = "H" CTL2 = "H" CTL3 = "L" RT = 10 k CT = 100 pF
Conversion efficiency (%)
90 80 70 60 50 40 30 10m
VIN = 7 V VIN = 10 V VIN = 12 V
100m
1
10
Load current IL (A)
(Continued) 31
MB39A112
(Continued)
Conversion Efficiency vs. Load Current Characteristics (CH1)
100
Ta = + 25 C 1.2 V output CTL1 = "L" CTL2 = "H" CTL3 = "H" RT = 24 k CT = 100 pF
Conversion efficiency (%)
90 80 70 60 50 40 30 10 m
VIN = 7 V VIN = 10 V VIN = 12 V
100 m
1
10
Load current IL (A) Conversion Efficiency vs. Load Current Characteristics (CH2)
100
Ta = + 25 C 3.3 V output CTL1 = "H" CTL2 = "L" CTL3 = "H" RT = 24 k CT = 100 pF
Conversion efficiency (%)
90 80 70 60 50 40 30 10 m
VIN = 7 V VIN = 10 V VIN = 12 V
100 m
1
10
Load current IL (A) Cconversion Efficiency vs. Load Current Characteristics (CH3)
100
Ta = + 25 C 5.0 V output CTL1 = "H" CTL2 = "H" CTL3 = "L" RT = 24 k CT = 100 pF
Cconversion efficiency (%)
90 80 70 60 50 40 30 10 m
VIN = 7 V VIN = 10 V VIN = 12 V
100 m
1
10
Load current IL (A)
32
MB39A112
s USAGE PRECAUTION
* Printed circuit board ground lines should be set up with consideration for common impedance. * Take appropriate static electricity measures. * Containers for semiconductor materials should have anti-static protection or be made of conductive material. * After mounting, printed circuit boards should be stored and shipped in conductive bags or containers. * Work platforms, tools and instruments should be properly grounded. * Working personnel should be grounded with resistance of 250 k to 1 M between body and ground. * Do not apply negative voltages. * The use of negative voltages below -0.3 V may create parasitic transistors on LSI lines, which can cause abnormal operation.
s ORDERING INFORMATION
Part number MB39A112PFT Package 20-pin plastic TSSOP (FPT-20P-M06) Remarks
33
MB39A112
s PACKAGE DIMENSION
20-pin plastic TSSOP (FPT-20P-M06) Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) Max) . Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder.
0.170.05 (.007.002)
11
*1 6.500.10(.256.004)
20
INDEX
*2 4.400.10 6.400.20 (.173.004) (.252.008)
Details of "A" part 1.050.05 (Mounting height) (.041.002) LEAD No.
1 10
0.65(.026)
"A" 0.240.08 (.009.003) 0.13(.005)
M
0~8
+0.03 +.001
(0.50(.020)) 0.600.15 (.024.006)
0.07 -0.07 .003 -.003 (Stand off) 0.25(.010)
0.10(.004)
C
2003 FUJITSU LIMITED F20026S-c-3-3
Dimensions in mm (inches) . Note : The values in parentheses are reference values.
34
MB39A112
FUJITSU LIMITED
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party's intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.
F0311 (c) FUJITSU LIMITED Printed in Japan

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